| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU414usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunityandbodydiodecharacteristics.ThisdeviceisideallysuitedforuseasalowsideswitchinCPUcorepowerconversion.StandardProductAOU414isPb-free(meetsROHS&Sony25 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
HIGHVOLTAGE,PHOTOMOSRELAY | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
HIGHVOLTAGE,PHOTOMOSRELAY | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
HIGHVOLTAGE,PHOTOMOSRELAY | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
HIGHVOLTAGE,PHOTOMOSRELAY | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
GU(GeneralUse)Type[2-Channel(FormB)Type] | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
HIGHVOLTAGE,PHOTOMOSRELAY | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
HIGHVOLTAGE,PHOTOMOSRELAY | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 |
详细参数
- 型号：
BAL414
- 制造商：
Thomas & Betts
- 功能描述：
LUG,BATTERY CABLE , ROHS
- COMPLIANT：
YES
- 功能描述：
Battery Terminal 4AWG Electro-Tin
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
富士通高见泽 |
2023+环保现货 |
专业继电器 |
6800 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
询价 | ||
继电器 |
1736+ |
RELAY |
8529 |
专营继电器只做原装正品假一赔十! |
询价 | ||
YANGJIE |
24+ |
SOT-23 |
50000 |
原厂直销全新原装正品现货 欢迎选购 |
询价 | ||
FUJITSU |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
N/A |
2984 |
原装正品长期供货，如假包赔包换 徐小姐13714450367 |
询价 | ||||
N/A |
21+ |
35200 |
一级代理/放心采购 |
询价 | |||
N/A |
最新 |
2984 |
原装正品 现货供应 价格优 |
询价 | |||
N/A |
23+ |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 | |||
INFINEON |
23+ |
SMD |
8000 |
只做原装现货 |
询价 | ||
16+ |
原厂封装 |
4612 |
原装现货假一罚十 |
询价 |
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