丝印：B830；Package：TO-251；5A 500V N-channel Enhancement Mode Power MOSFET

文件：1.72598 Mbytes 页数：12 Pages

WXDH

东海半导体

丝印：B830；Package：TO-251；5A 500V N-channel Enhancement Mode Power MOSFET

文件：1.71139 Mbytes 页数：12 Pages

WXDH

东海半导体

Surface Mount Schottky Barrier Rectifiers

REVERSE VOLTAGE 20 TO 60 VOLTS FORWARD CURRENT 8.0 AMPERE Features: *For Surface Mount Application *Metal-Semiconductor Junction With Guardring *Epitaxial Construction *Very Low Forward Voltage Drop *High Current Capability *Plastic Meterial Has UL Flammability Classificatio

文件：209.73 Kbytes 页数：3 Pages

WEITRON

Common Mode Choke For ADSL and VDSL

文件：366.83 Kbytes 页数：1 Pages

pulse

ADSL Line Transformers

文件：527.16 Kbytes 页数：1 Pages

pulse

丝印：B834；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Low Collector -Emitter Saturation Voltage VCE(sat)=1.0V(Max)@ IC=-3A,IB=-0.3A DC current Gain hFE =60-200@ IC=0.5A Complementary to NPN 2SD880

文件：1.40417 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：B835L；Package：SOT-428；SWITCHMODE Power Rectifier

This switch−mode power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. Features • Low Forwa

文件：130.83 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：B835L；Package：SOT-428；SWITCHMODE Power Rectifier

文件：113.63 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

指针式测温仪

M&M Control

指针式测温仪

M&M Control