B830

Surface Mount Schottky Barrier Rectifiers

REVERSEVOLTAGE20TO60VOLTSFORWARDCURRENT8.0AMPERE Features: *ForSurfaceMountApplication *Metal-SemiconductorJunctionWithGuardring *EpitaxialConstruction *VeryLowForwardVoltageDrop *HighCurrentCapability *PlasticMeterialHasULFlammabilityClassificatio

B830

Marking：B830；Package：TO-251；5A 500V N-channel Enhancement Mode Power MOSFET

B830

Common Mode Choke For ADSL and VDSL

B830WB

Marking：B830；Package：TO-251；5A 500V N-channel Enhancement Mode Power MOSFET

BB830

830tie-pointSolderlessPlug-InBreadBoardwithpowerrails

Features: •830tiepointstotal:630tie-pointIC-circuitareaplustwo100tie-pointdistributionstrips providing4powerrails. •ABSplasticbodywithblackprintedlegend.Colorlegendondistributionstrips. •ContactsarePhosphorBronzewithPlatedNickelFinish,ratedfor50,000inse

BB830-KIT

An830tie-pointSolderlessBreadBoard,10cmZipWire™Cables,3AABatteryBoxandagreenLEDwithresistor

BD830

PNPpowertransistor

DESCRIPTION PNPpowertransistorinaTO-202;SOT128Bplasticpackage.NPNcomplement:BD829. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Generalpurpose •Driverstagesinhi-fiamplifiersandtelevisioncircuits.

BD830

iscSiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-100V(Min) •HighDCCurrentGain •LowSaturationVoltage •ComplementtoTypeBD829 •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designedfordriver-stagesinhi-fiamplif

BLV830

N-channelEnhancementModePowerMOSFET

BPW-830C

300WDC-DCATXpowersupplyInputRange:19~32VDC