丝印：B540CX；Package：SMC；5A TRENCH SCHOTTKY BARRIER RECTIFIER SMC

Features  Low Leakage Current  Soft, Fast Switching Capability  +150°C Operating Junction Temperature  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualifie

文件：637.41 Kbytes 页数：5 Pages

DIODES

美台半导体

5A TRENCH SCHOTTKY BARRIER RECTIFIER SMC

Features  Low Leakage Current  Soft, Fast Switching Capability  +150°C Operating Junction Temperature  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualifie

文件：637.41 Kbytes 页数：5 Pages

DIODES

美台半导体

5A Trench Schottky Barrier Rectifier

For use in low-voltage, high-frequency inverters, freewheeling, DCDC converters, and polarity applications.

Diodes

美台半导体

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD539 Series ● 45 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Customer-Specified Selections Available

文件：85.18 Kbytes 页数：6 Pages

POINN

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD539 Series ● 45 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Customer-Specified Selections Available

文件：104.34 Kbytes 页数：5 Pages

Bourns

伯恩斯

isc Silicon PNP Power Transistor

DESCRIPTION • DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) • Complement to Type BD539 APPLICATIONS • Designed for use in medium power linear and switching applications.

文件：249.81 Kbytes 页数：2 Pages

ISC

无锡固电