丝印：L4；Package：SOD-123ST；1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

文件：91.99 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：L2；Package：SOD-123ST；1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

文件：91.99 Kbytes 页数：3 Pages

CITC

竹懋科技

Surface-Mount Schottky Barrier Rectifier

FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definit

文件：116.31 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Ideally Suited for Automatic Assembly • Low Power Loss, High Efficiency • Surge Overload Rating to 70A Peak • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection App

文件：65.67 Kbytes 页数：2 Pages

DIODES

美台半导体

Surface Mount Schottky Barrier Diodes

Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current * High Current Capability * Plastic Material Has UL Flammability Classification 94V-0 * For Use in, High Frequency Inverters, Free Wheeling, and Polarity Pro

文件：139.24 Kbytes 页数：3 Pages

WEITRON

N-CHANNEL 75V - 0.0065 ohm -120A DPAK/IPAK/TO-220 STripFET II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件：541 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • High Conductance • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3)

文件：114.12 Kbytes 页数：3 Pages

DIODES

美台半导体

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • High Conductance • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3)

文件：114.12 Kbytes 页数：3 Pages

DIODES

美台半导体

HIGH VOLTAGE SWITCHING TRANSISTOR

■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)

文件：100.53 Kbytes 页数：5 Pages

UTC

友顺

PNP EPITAXIAL PLANAR TRANSISTOR

Features: * Excellent DC Current Gain Characteristics * Low VCE(Sat)

文件：249.13 Kbytes 页数：4 Pages

WEITRON