B1412

PNP Silicon Low Frequency Transistor

Features 1)LowVCE(sat). 2)ExcellentDCcurrentgaincharacteristics 3)Complementsthe2SD2118

B1412

Low Frequency Transistor(-20V,-5A)

Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166.

B1412

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features LowVCE(sat),excellentDCcurrentgaincharacteristics,complementsthe2SD2118. Applications Mediumpoweramplifierapplications.

B1412

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES PowerAmplifierApplications

B1412

isc Silicon NPN Power Transistor

DESCRIPTION •Smallandslimpackagemakingiteasytomake2SB1205-usedsetsmaller •Lowcollector-to-emittersaturationvoltage •Fastswitchingspeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Poweramplifie

B1412

PNP EPITAXIAL PLANAR TRANSISTOR

Features: *ExcellentDCCurrentGainCharacteristics *LowVCE(Sat)

B1412

HIGH VOLTAGE SWITCHING TRANSISTOR

■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

1412

DecadeCapacitor

Features: •VerificationandcalibrationofLCRmeters •Capacitancemeasurementfunctions •Verificationandcalibrationofmultimeters •50pFto>1μF •Betterthan1pFresolution •Accuracyof±(0.5+5pF) •Lowloss,leakage,dielectricabsorption DESCRIPTION Fordecadesofpolys

A1412CHNF

ContinuousHingewithClamps,Type4

A1412CHNFSS

JunctionBoxes

A1412LP

Lift-Off-Cover,Type12

A1412PSWPNL

MountingbracketsrequiredtomeetUL/CSAexternalmountingrequirements.

A1412SC

ScrewCover,Type12

ABP1412

PaintedSteelBackPanel

ADC1412D

Dual14-bitADC;65Msps,80Msps,105Mspsor125Msps;CMOSorLVDSDDRdigitaloutputs

1.Generaldescription TheADC1412Disadualchannel14-bitAnalog-to-DigitalConverter(ADC)optimizedfor highdynamicperformanceandlowpowerconsumptionatsampleratesupto125Msps. PipelinedarchitectureandoutputerrorcorrectionensuretheADC1412Disaccurate enoughtoguarantee

ADC1412D

Dual14-bitADC;65Msps,80Msps,105Mspsor125Msps;CMOSorLVDSDDRdigitaloutputs

ADC1412D

Dual14-bitADC;65Msps,80Msps,105Mspsor125Msps;CMOSorLVDSDDRdigitaloutputs

ADFP1412

DeadFrontPanelw/screws

ADG1412

2??MaxOnResistance,짹15V/12V/짹5ViCMOS??QuadSPSTSwitch

GENERALDESCRIPTION TheADG1411/ADG1412/ADG1413aremonolithiccomplementarymetal-oxidesemiconductor(CMOS)devicescontainingfourindependentlyselectableswitchesdesignedonaniCMOS®process.iCMOS(industrialCMOS)isamodularmanufacturingprocesscombininghighvoltageCMOSandbipolar

ADG1412L

1.5ΩRON,QuadSPSTSwitchwith1.2Vand1.8VJEDECLogicCompliance

GENERALDESCRIPTION TheADG1412Lisamonolithiccomplementarymetal-oxidesemiconductor (CMOS)devicecontainingfourindependentlyselectable switchesdesignedonaniCMOS®process.IndustrialCMOS(iCMOS) isamodularmanufacturingprocesscombininghighvoltage CMOSandbipolartechnologi