HIGH VOLTAGE SWITCHING TRANSISTOR

■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)

文件：100.53 Kbytes 页数：5 Pages

UTC

友顺

PNP EPITAXIAL PLANAR TRANSISTOR

Features: * Excellent DC Current Gain Characteristics * Low VCE(Sat)

文件：249.13 Kbytes 页数：4 Pages

WEITRON

Low Frequency Transistor(-20V,-5A)

Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC / IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.

文件：107.17 Kbytes 页数：5 Pages

ROHM

罗姆

isc Silicon NPN Power Transistor

DESCRIPTION • Small and slim package making it easy to make 2SB1205-used set smaller • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifie

文件：265.26 Kbytes 页数：3 Pages

ISC

无锡固电

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power Amplifier Applications

文件：458.52 Kbytes 页数：2 Pages

JIANGSU

长电科技

PNP Silicon Low Frequency Transistor

Features 1) Low VCE(sat). 2) Excellent DC current gain characteristics 3) Complements the 2SD2118

文件：209.53 Kbytes 页数：3 Pages

SECOS

喜可士

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features Low VCE(sat),excellent DC current gain characteristics, complements the 2SD2118. Applications Medium power amplifier applications.

文件：818.25 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子