丝印：B127；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Features Low Input Capacitance High BVDSS Rating for Power Application Low Input/Output Leakage Appl

文件：242.32 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：B12C；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature 140~298 Watts Peak Pulse Power per Line (tp=8/20μs) Protects two I/O lines Low clamping voltage Working voltages: 3.3V ~ 36V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) 3.3V~15V IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) 24V~36V IEC61000-4-4 (EFT) 40A (5

文件：2.88396 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：B12C；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature Moisture Sensitivity Level (MSL -1) AEC-Q101 qualified 140~298 Watts Peak Pulse Power per Line (tp=8/20μs) Protects two unidirectional I/O lines Low Clamping Voltage Working Voltages: 3.3V~36V Low leakage current IEC61000-4-4 (EFT): 40A (5/50ηs) IEC61000-4-2 (ESD) ±30kV (air), ±30

文件：2.5237 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：B12NM50；Package：I2PAK；N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET

Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

文件：115.55 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：B12NM50；Package：D2PAK；N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET

Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

文件：115.55 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：B123；Package：SOT-26；Dual N-Channel Enhancement Mode MOSFET

Features Advanced Trench Process Technology Low Threshold Voltage Fast Switching Speed Halogen-Free & Lead-Free Applications Load Switch for Portable Devices Voltage Controlled Small Signal Switch

文件：5.46728 Mbytes 页数：9 Pages

UNSEMI

优恩半导体

丝印：B1202；Package：TP；High-Current Switching Applications

文件：500 Kbytes 页数：10 Pages

SANYO

三洋

丝印：B1202；Package：TP；High-Current Switching Applications

文件：500 Kbytes 页数：10 Pages

SANYO

三洋

丝印：B1203；Package：TP；High-Current Switching Applications

文件：519.36 Kbytes 页数：10 Pages

SANYO

三洋

丝印：B1203；Package：TP；High-Current Switching Applications

文件：519.36 Kbytes 页数：10 Pages

SANYO

三洋