丝印：B1020B；Package：TO-220SIS；Bipolar Transistors Silicon PNP Triple-Diffused Type

Applications • High-Current Switching • Hammer Drivers Features (1) High DC current gain: hFE = 2000 (min) (VCE = -3 V , IC = -3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -1.5 V (max) (IC = -3 A , IB = -6 mA) (3) Complementary to TTD1415B

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