Power transistor for high-speed switching applications

Feature：High hFE / Low saturation voltage\nApplication Scope：High current switching\nPolarity：PNP\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Collector Current IC -7 A \nCollector Current ICP -10 A \nCollector power dissipation PC 30 W \nCollector power dissipation PC 2 W \nCollector-Base Voltage VCBO -100 V \nCollector-emitter voltage VCEO -100 V ;

Toshiba

东芝

丝印：B1020B；Package：TO-220SIS；Bipolar Transistors Silicon PNP Triple-Diffused Type

Applications • High-Current Switching • Hammer Drivers Features (1) High DC current gain: hFE = 2000 (min) (VCE = -3 V , IC = -3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -1.5 V (max) (IC = -3 A , IB = -6 mA) (3) Complementary to TTD1415B

文件：207.51 Kbytes 页数：7 Pages

TOSHIBA

东芝

包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANSISTOR PNP TO220

Toshiba Semiconductor and Storage

Crystal Unit SMD 3.2x2.5 25.00MHz

Features: Surface Mount Hermetic Package Excellent Reliability Performance Good Frequency Perturbation and Stability over temperature Ultra Miniature Package Description and Applications: Surface mount 3.2mmx2.5mm crystal unit for use in wireless communications devices, especially for a n

文件：300.48 Kbytes 页数：7 Pages

TAI-SAW

嘉硕科技

Pre-amplifiers for CD-RW systems

文件：153.98 Kbytes 页数：36 Pages

PHI

飞利浦

Pre-amplifiers for CD-RW systems

文件：153.98 Kbytes 页数：36 Pages

PHI

飞利浦