ATC100B0R5BT500XT

N--Channel Enhancement--Mode Lateral MOSFETs

Features GreaterNegativeGate--SourceVoltageRangeforImprovedClassC Operation DesignedforDigitalPredistortionErrorCorrectionSystems OptimizedforDohertyApplications InTapeandReel.R3Suffix=250Units,32mmTapeWidth,13--inchReel.

ETC

ATC100B0R6BT250XT

RF LDMOS Wideband Integrated Power Amplifiers

RFLDMOSWidebandIntegratedPowerAmplifiers TheMW7IC2240Nwidebandintegratedcircuitisdesignedwithon-chipmatchingthatmakesitusablefrom2000to2200MHz.Thismulti-stagestructureisratedfor24to32Voltoperationandcoversalltypicalcellularbasestationmodulationformatsin

ATC100B0R6BT500XT

RF Power LDMOS Transistor

N--ChannelEnhancement--ModeLateralMOSFET This38WRFpowerLDMOStransistorisdesignedforcellularbasestation applicationsrequiringverywideinstantaneousbandwidthcapabilitycovering thefrequencyrangeof1805to1995MHz. Features Designedforwideinstantaneousbandwidthap

ETC

ATC100B0R6BT500XT

RF Power LDMOS Transistors

N--ChannelEnhancement--ModeLateralMOSFETs These50WRFpowerLDMOStransistorsaredesignedforcellular basestationapplicationscoveringthefrequencyrangeof2110to2170MHz. TypicalSingle--CarrierW--CDMAPerformance:VDD=28Vdc,IDQ=1500mA, Pout=50WAvg.,InputSignalPA

ETC

ATC100B0R8BT500XT

RF Power Field Effect Transistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom1805to 1880MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. •TypicalSingle--Ca

ETC

ATC100B0R8BT500XT

N--Channel Enhancement--Mode Lateral MOSFETs

Features GreaterNegativeGate--SourceVoltageRangeforImprovedClassC Operation DesignedforDigitalPredistortionErrorCorrectionSystems OptimizedforDohertyApplications InTapeandReel.R3Suffix=250Units,32mmTapeWidth,13--inchReel.

ETC

ATC100B100GT500XT

1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features Highterminalimpedancesforoptimalbroadbandperformance Advancedhighperformancein--packageDoherty AbletowithstandextremelyhighoutputVSWRandbroadbandoperating conditions

ETC

ATC100B101JT500XT

RF Power Field Effect Transistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom1805to 1880MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. •TypicalSingle--Ca

ETC

ATC100B101JT500XT

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500MHz,600W,50VLATERALN--CHANNELBROADBANDRFPOWERMOSFET Designedprimarilyforwidebandapplicationswithfrequenciesupto500MHz.Deviceisunmatchedandissuitableforuseinbroadcastapplications. •TypicalDVB--TOFDMPerformance:VDD=50Volts,IDQ=2600mA,Pout=125Wa

ATC100B102JT50XT

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedprimarilyforCWlarge-signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications.