RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs These 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz. Features  Designed for Wide Instantaneous Bandwidt

文件：468.68 Kbytes 页数：15 Pages

恩XP

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN--PCS/cellular radio and WLL applications. • Typical Single--Ca

文件：1.01021 Mbytes 页数：18 Pages

恩XP

N--Channel Enhancement--Mode Lateral MOSFETs

Features  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems  Optimized for Doherty Applications  In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.

文件：557.94 Kbytes 页数：16 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifiers

RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2240N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats in

文件：817.31 Kbytes 页数：24 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 38 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz. Features  Designed for wide instantaneous bandwidth ap

文件：502.63 Kbytes 页数：18 Pages

恩XP

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.  Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 1500 mA, Pout = 50 W Avg., Input Signal PA

文件：543.07 Kbytes 页数：17 Pages

恩XP

N--Channel Enhancement--Mode Lateral MOSFETs

Features  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems  Optimized for Doherty Applications  In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.

文件：557.94 Kbytes 页数：16 Pages

恩XP

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN--PCS/cellular radio and WLL applications. • Typical Single--Ca

文件：1.01021 Mbytes 页数：18 Pages

恩XP

1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features  High terminal impedances for optimal broadband performance  Advanced high performance in--package Doherty  Able to withstand extremely high output VSWR and broadband operating conditions

文件：414.55 Kbytes 页数：18 Pages

恩XP

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN--PCS/cellular radio and WLL applications. • Typical Single--Ca

文件：1.01021 Mbytes 页数：18 Pages

恩XP