RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs These 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz. Features  Designed for Wide Instantaneous Bandwidt

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RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN--PCS/cellular radio and WLL applications. • Typical Single--Ca

文件：1.01021 Mbytes 页数：18 Pages

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N--Channel Enhancement--Mode Lateral MOSFETs

Features  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems  Optimized for Doherty Applications  In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.

文件：557.94 Kbytes 页数：16 Pages

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RF LDMOS Wideband Integrated Power Amplifier

文件：852.88 Kbytes 页数：17 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifiers

文件：1.24777 Mbytes 页数：23 Pages

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RF LDMOS Wideband Integrated Power Amplifiers

文件：1.14805 Mbytes 页数：32 Pages

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RF LDMOS Integrated Power Amplifier

文件：726.22 Kbytes 页数：12 Pages

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RF LDMOS Wideband Integrated Power Amplifiers

文件：1.14836 Mbytes 页数：22 Pages

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RF LDMOS Wideband Integrated Power Amplifiers

文件：1.15527 Mbytes 页数：24 Pages

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RF LDMOS Wideband Integrated Power Amplifiers

文件：1.22311 Mbytes 页数：28 Pages

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