Miniature, High power, Wirewound ATC Series

APPLICATIONS  Power, pulse application  Industry electronic  Large-sized machinery FEATURES  Reduced size  High power range  Excellent surge performance  RoHS compliant & halogen-free

文件：1.19423 Mbytes 页数：7 Pages

YAGEO

国巨

AC-DC Power Module

KEY FEATURES ■ Switching Power Module for PCB Mountable ■ Fully Encapsulated Plastic Case ■ Universal Input Range 90-264VAC, 47-440 Hz ■ Regulated Output ■ Low Ripple and Noise ■ Screw Terminal For Optional ■ CE, UL, TUV Approval ■ 2-Years Product Warranty

文件：401.92 Kbytes 页数：5 Pages

ARCH

10 Watt Ultraminiature Modular Switching Power Supplies

KEY FEATURES ■ Switching Power Module for PCB Mountable ■ Fully Encapsulated Plastic Case ■ Universal Input Range 90-264VAC, 47-440 Hz ■ Regulated Output ■ Low Ripple and Noise ■ High Efficiency ■ CE, cUL, TUV Approvals ■ 2-Year Product Warranty

文件：244.7 Kbytes 页数：3 Pages

ASTRODYNE

Blade fuses

文件：477.92 Kbytes 页数：4 Pages

EATON

伊顿

Limit Alarms (potentiometer adj.) A-UNIT

文件：134.82 Kbytes 页数：4 Pages

MSYSTEM

爱模

丝印：ATC；Package：SOD-123FL；Transient Voltage Suppressor

文件：492.52 Kbytes 页数：5 Pages

BILIN

银河微电

RF LDMOS Wideband Integrated Power Amplifier

RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 1990 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.

文件：1.1895 Mbytes 页数：17 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifier

RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 1990 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.

文件：1.1895 Mbytes 页数：17 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifier

RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 1990 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.

文件：1.1895 Mbytes 页数：17 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifier

RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 1990 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.

文件：1.1895 Mbytes 页数：17 Pages

恩XP