RF Power LDMOS Transistor

N−Channel Enhancement−Mode Lateral MOSFET This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz. Features • Greater negative gate−source voltage range for improved Class C operation • On−chip matching (50 ohm in

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RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.  Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1800 mA, Pout = 50 Watts Avg., Input Sign

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N--Channel Enhancement--Mode Lateral MOSFETs

Features  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems  Optimized for Doherty Applications  In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.

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RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.  Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1800 mA, Pout = 50 Watts Avg., Input Sign

文件：461.16 Kbytes 页数：13 Pages

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RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 38 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz. Features  Designed for wide instantaneous bandwidth ap

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N--Channel Enhancement--Mode Lateral MOSFETs

Features  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems  Optimized for Doherty Applications  In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.

文件：557.94 Kbytes 页数：16 Pages

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RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

This 93 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1427 to 1517 MHz. Features • Advanced high performance in−package Doherty • Greater negative gate−source voltage range for improved Class C operation

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N-Channel Enhancement-Mode Lateral MOSFET

Features  Advanced high performance in--package Doherty  Greater negative gate--source voltage range for improved Class C operation  Designed for digital predistortion error correction systems

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RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

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freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.  Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1800 mA, Pout = 50 Watts Avg., Input Sign

文件：461.16 Kbytes 页数：13 Pages

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