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CSD60N100

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

DAM60N100C

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

DAM60N100G

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

DAM60N100T

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

FGL60N100

NPTIGBT

DESCRIPTION ·NPTTechnology ·HighSpeedSwitching&LowPowerLoss ·HighInputImpedance APPLICATIONS •UPS,Inverter,Welder •AC&DCmotorcontrols

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FGL60N100BNTD

1000V,60ANPTTrenchIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGL60N100BNTD

NPT-TrenchIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGL60N100BNTDTU

1000V,60ANPTTrenchIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGL60N100D

ElectricalCharacteristicsofIGBT

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductionandswitchingtoplanargatestructure,andalsohavewidenoiseimmunity.ThesedevicesarewellsuitableforIHapplications Features •HighSpeedSwitching •Low

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

G60N100

N-ChannelIGBTwithFRD

GeneralDescription TheTSG60N100CEusingproprietarytrenchdesignandadvancedNPTtechnology,the1000VNPTIGBTofferssuperiorconductionandswitchingperformances,highavalancheruggednessandeasyparalleloperation.Thisdeviceiswellsuitedfortheresonantorsoftswitchingapplicati

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

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