512K X 8 BIT LOW POWER CMOS SRAM

FEATURES Access time : 55 ns Low power consumption: Operating current : 30 mA (TYP.) Standby current : 4 μA (TYP.) Single 2.7V ~ 5.5V power supply All outputs TTL compatible Fully static operation Tri-state output Data retention voltage :1.5V (MIN.) All products ROHS Compliant Package : 32-p

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512K X 8 BIT LOW POWER CMOS SRAM

FEATURES Access time : 55 ns Low power consumption: Operating current : 30 mA (TYP.) Standby current : 4 μA (TYP.) Single 2.7V ~ 5.5V power supply All outputs TTL compatible Fully static operation Tri-state output Data retention voltage :1.5V (MIN.) All products ROHS Compliant Package : 32-p

文件：722.52 Kbytes 页数：14 Pages

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512K X 8 BIT LOW POWER 512K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The AS6C4008 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEAT

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512K X 8 BIT LOW POWER CMOS SRAM

FEATURES Access time : 55 ns Low power consumption: Operating current : 30 mA (TYP.) Standby current : 4 μA (TYP.) Single 2.7V ~ 5.5V power supply All outputs TTL compatible Fully static operation Tri-state output Data retention voltage :1.5V (MIN.) All products ROHS Compliant Package : 32-p

文件：722.52 Kbytes 页数：14 Pages

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32K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The AS6C62256 is a 262,144-bit low power CMOS static random access memory organized as 32,768 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES ■

文件：2.30517 Mbytes 页数：12 Pages

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Common data inputs and data outputs

DESCRIPTION The AS6C62256A is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention The memory array is based on a 6-transistor cell. FEATURES ● 32768x8 bit static CMOS RAM ● Access times 70 ns ● Comm

文件：599.25 Kbytes 页数：10 Pages

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32K X 8 BIT LOW POWER CMOS SRAM

DESCRIPTION The AS6C62256A is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention The memory array is based on a 6-transistor cell. FEATURES ● 32768x8 bit static CMOS RAM ● Access times 70 ns ● Comm

文件：599.25 Kbytes 页数：10 Pages

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8K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The AS6C6264 is a 65,536-bit low power CMOS static random access memory organized as 8,192 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES

文件：1.96377 Mbytes 页数：12 Pages

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8K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The AS6C6264 is a 65,536-bit low power CMOS static random access memory organized as 8,192 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES

文件：871.05 Kbytes 页数：12 Pages

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Common data inputs and outputs

DESCRIPTION The AS6C6264A is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention The memory array is based on a 6-transistor cell. FEATURES  8192 x 8 bit static CMOS RAM  70 ns Access T

文件：885.97 Kbytes 页数：10 Pages

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