AS6C6264

8K X 8 BIT LOW POWER CMOS SRAM

GENERALDESCRIPTION TheAS6C6264isa65,536-bitlowpowerCMOSstaticrandomaccessmemoryorganizedas8,192wordsby8bits.Itisfabricatedusingveryhighperformance,highreliabilityCMOStechnology.Itsstandbycurrentisstablewithintherangeofoperatingtemperature. FEATURES

AS6C6264

8K X 8 BIT LOW POWER CMOS SRAM;

ETC

AS6C6264-55PCN

8K X 8 BIT LOW POWER CMOS SRAM

GENERALDESCRIPTION TheAS6C6264isa65,536-bitlowpowerCMOSstaticrandomaccessmemoryorganizedas8,192wordsby8bits.Itisfabricatedusingveryhighperformance,highreliabilityCMOStechnology.Itsstandbycurrentisstablewithintherangeofoperatingtemperature. FEATURES

AS6C6264A

Common data inputs and outputs

DESCRIPTION TheAS6C6264AisastaticRAMmanufacturedusingaCMOSprocesstechnologywiththefollowingoperatingmodes: -Read-Standby -Write-DataRetention Thememoryarrayisbasedona6-transistorcell. FEATURES 8192x8bitstaticCMOSRAM 70nsAccessT

AS6C6264A

8K X 8 BIT LOW POWER CMOS SRAM;  8192 x 8 bit static CMOS RAM\n 70 ns Access Times\n Common data inputs and outputs\nThree-state outputs\n Typ. operating supply current\n      o 70 ns: 10 mA\nStandby current:\n      o< 2 μA at Ta ≤ 70 °C\n Data retention current at 2 V:\n      o< 1 μA at Ta ≤ 70 °C\nTTL/CMOS-compatible\nAutomatic reduction of power dissipation in long Read or Write cycles\n   Power supply voltage 5 V\nOperating temperature ranges:\n      o 0 to 70 °C\n      o -40 to 85 °C\n ESD protection 2000 V (MIL STD 883C M3015.7)\n Latch-up immunity 100 mA\n Packages: PDIP28 (600 mil)\n                 SOP28 (330 mil);

DESCRIPTION\nThe AS6C6264A is a static RAM manufactured using a CMOS process technology with the following operating modes:\n  - Read - Standby\n  - Write - Data Retention\nThe memory array is based on a 6-transistor cell.FEATURES\n 8192 x 8 bit static CMOS RAM\n 70 ns Access Times\n Common data inputs and outputs\nThree-state outputs\n Typ. operating supply current\n      o 70 ns: 10 mA\nStandby current:\n      o< 2 μA at Ta ≤ 70 °C\n Data retention current at 2 V:\n      o< 1 μA at Ta ≤ 70 °C\nTTL/CMOS-compatible\nAutomatic reduction of power dissipation in long Read or Write cycles\n   Power supply voltage 5 V\nOperating temperature ranges:\n      o 0 to 70 °C\n      o -40 to 85 °C\n ESD protection 2000 V (MIL STD 883C M3015.7)\n Latch-up immunity 100 mA\n Packages: PDIP28 (600 mil)\n                 SOP28 (330 mil)

ETC

AS6C6264A-70PCN

Common data inputs and outputs

DESCRIPTION TheAS6C6264AisastaticRAMmanufacturedusingaCMOSprocesstechnologywiththefollowingoperatingmodes: -Read-Standby -Write-DataRetention Thememoryarrayisbasedona6-transistorcell. FEATURES 8192x8bitstaticCMOSRAM 70nsAccessT

AS6C6264A-70PIN

Common data inputs and outputs

DESCRIPTION TheAS6C6264AisastaticRAMmanufacturedusingaCMOSprocesstechnologywiththefollowingoperatingmodes: -Read-Standby -Write-DataRetention Thememoryarrayisbasedona6-transistorcell. FEATURES 8192x8bitstaticCMOSRAM 70nsAccessT

AS6C6264A-70SCN

Common data inputs and outputs

DESCRIPTION TheAS6C6264AisastaticRAMmanufacturedusingaCMOSprocesstechnologywiththefollowingoperatingmodes: -Read-Standby -Write-DataRetention Thememoryarrayisbasedona6-transistorcell. FEATURES 8192x8bitstaticCMOSRAM 70nsAccessT

AS6C6264A-70SIN

Common data inputs and outputs

DESCRIPTION TheAS6C6264AisastaticRAMmanufacturedusingaCMOSprocesstechnologywiththefollowingoperatingmodes: -Read-Standby -Write-DataRetention Thememoryarrayisbasedona6-transistorcell. FEATURES 8192x8bitstaticCMOSRAM 70nsAccessT

AS6C6264-55STCN

8K x 8 Bit Low Power CMOS SRAM;

ETC