Common data inputs and outputs

DESCRIPTION The AS6C6264A is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention The memory array is based on a 6-transistor cell. FEATURES  8192 x 8 bit static CMOS RAM  70 ns Access T

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Common data inputs and outputs

DESCRIPTION The AS6C6264A is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention The memory array is based on a 6-transistor cell. FEATURES  8192 x 8 bit static CMOS RAM  70 ns Access T

文件：885.97 Kbytes 页数：10 Pages

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8K X 8 BIT LOW POWER CMOS SRAM

FEATURES Access time :55ns Low power consumption: Operation current : 15mA (TYP.), VCC = 3.0V Standby current : 1μ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product Fully Compatible with all Competitors 3.3V product All inp

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A6 Series — Miniature Switches and Pilot Devices: 16mm

Key features: • 16mm (5/8”) mounting hole • LED illumination • Compact design saves space • Momentary, Maintained, Selectors, and E-Stops • Gold-clad Silver contacts for reliable low level switching • Snap action contacts • IP40 (dustproof) or IP65 (oiltight) versions

文件：3.55766 Mbytes 页数：14 Pages

IDEC

和泉电气

2.3V to 3.6V 256K횞16 Intelliwatt??low-power CMOS SRAM with one chip enable

[Alliance] Functional description The AS6UA25616 is a low-power CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 262,144 words x 16 bits. It is designed for memory applications where slow data access, low power, and simple interfacing are desired. ‘Features • AS6UA2561

文件：190.83 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2.3V to 3.6V 256K횞16 Intelliwatt??low-power CMOS SRAM with one chip enable

[Alliance] Functional description The AS6UA25616 is a low-power CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 262,144 words x 16 bits. It is designed for memory applications where slow data access, low power, and simple interfacing are desired. ‘Features • AS6UA2561

文件：190.83 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2.3V to 3.6V 256K횞16 Intelliwatt??low-power CMOS SRAM with one chip enable

[Alliance] Functional description The AS6UA25616 is a low-power CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 262,144 words x 16 bits. It is designed for memory applications where slow data access, low power, and simple interfacing are desired. ‘Features • AS6UA2561

文件：190.83 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2.3V to 3.6V 256K횞16 Intelliwatt??low-power CMOS SRAM with one chip enable

[Alliance] Functional description The AS6UA25616 is a low-power CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 262,144 words x 16 bits. It is designed for memory applications where slow data access, low power, and simple interfacing are desired. ‘Features • AS6UA2561

文件：190.83 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2.3V to 3.6V 256K횞16 Intelliwatt??low-power CMOS SRAM with one chip enable

[Alliance] Functional description The AS6UA25616 is a low-power CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 262,144 words x 16 bits. It is designed for memory applications where slow data access, low power, and simple interfacing are desired. ‘Features • AS6UA2561

文件：190.83 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1.65V to 3.6V 512K횞16 Intelliwatt low power CMOS SRAM with one chip enable

Functional description The AS6UA51216 is a low-power CMOS 8,388,608-bit Static Random Access Memory (SRAM) device organized as 524,288 words × 16 bits. It is designed for memory applications where slow data access, low power, and simple interfacing are desired. Features • AS6UA51216 • Intelliw

文件：126.15 Kbytes 页数：9 Pages

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