128K X 8 BIT LOW POWER CMOS SRAM

GENERA L DESCRIPTION The AS6C1008 is a 1,048,57 6-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMO S technology. Its standby current is stable within the range of operating temperature. FEATURE

文件：2.74793 Mbytes 页数：14 Pages

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128k x 8 BIT SUPER LOW POWER CMOS SRAM

GENERAL DESCRIPTION The AS6C1008L is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES

文件：1.49329 Mbytes 页数：15 Pages

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128k x 8 BIT SUPER LOW POWER CMOS SRAM

GENERAL DESCRIPTION The AS6C1008L is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES

文件：1.49329 Mbytes 页数：15 Pages

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128k x 8 BIT SUPER LOW POWER CMOS SRAM

GENERAL DESCRIPTION The AS6C1008L is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES

文件：1.49329 Mbytes 页数：15 Pages

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128k x 8 BIT SUPER LOW POWER CMOS SRAM

GENERAL DESCRIPTION The AS6C1008L is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES

文件：1.49329 Mbytes 页数：15 Pages

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256K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The AS6C2008 is a 2,097,152-bit low power CMOS static random access memory organized as 262,144 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C20

文件：3.13199 Mbytes 页数：13 Pages

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32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM

GENERAL DESCRIPTION The AS6C3216 is a 33,554,432-bit low power CMOS static random access memory organized as 2,097,152 words by 16 bits or 4,194,304 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of o

文件：442.77 Kbytes 页数：13 Pages

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32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM

GENERAL DESCRIPTION The AS6C3216 is a 33,554,432-bit low power CMOS static random access memory organized as 2,097,152 words by 16 bits or 4,194,304 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of o

文件：442.77 Kbytes 页数：13 Pages

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Low Power CMOS SRAM

GENERAL DESCRIPTION The AS6C3216A-55BIN is a 33,554,432-bit low power CMOS static random access memory organized as 2,097,152 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.

文件：651.07 Kbytes 页数：11 Pages

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Fully static operation

GENERAL DESCRIPTION The AS6C3216A-55TIN is a 33,554,432-bit low power CMOS static random access memory organized as 2,097,152 words by 16 bits or 4,194,304 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the ran

文件：1.44197 Mbytes 页数：12 Pages

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