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APT8065

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

文件:60.81 Kbytes 页数:4 Pages

ADPOW

APT8065

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

文件:60.81 Kbytes 页数:4 Pages

ADPOW

APT8065

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

文件:63.27 Kbytes 页数:4 Pages

ADPOW

APT8065

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT

晶科电子

APT8065AVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

文件:60.81 Kbytes 页数:4 Pages

ADPOW

APT8065BVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

文件:63.27 Kbytes 页数:4 Pages

ADPOW

APT8065BVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

文件:60.81 Kbytes 页数:4 Pages

ADPOW

APT8065SVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

文件:63.43 Kbytes 页数:4 Pages

ADPOW

APT8065BVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件:63.92 Kbytes 页数:4 Pages

ADPOW

APT8065BVFR

isc N-Channel MOSFET Transistor

文件:420.1 Kbytes 页数:2 Pages

ISC

无锡固电

详细参数

  • 型号:

    APT8065

  • 制造商:

    ADPOW

  • 制造商全称:

    Advanced Power Technology

  • 功能描述:

    Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

供应商型号品牌批号封装库存备注价格
ATP
05+
TO-247
1200
原装进口
询价
APT
24+
8866
询价
APT
25+
TO-3P
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
APT
22+
TO-3P
8200
原装现货库存.价格优势!!
询价
APT
23+
TO-3P
3000
专做原装正品,假一罚百!
询价
Microch
20+
NA
33560
原装优势主营型号-可开原型号增税票
询价
APT
23+
TO247
50000
全新原装正品现货,支持订货
询价
APTMICROSEMI
2022+
TO-247B
12888
原厂代理 终端免费提供样品
询价
APT
23+
75322
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
APT
22+
TO-247
8000
原装正品支持实单
询价
更多APT8065供应商 更新时间2025-12-24 10:31:00