isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：309.65 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：360.07 Kbytes 页数：2 Pages

ISC

无锡固电

NA

Microchip

微芯科技

上传：深圳良洲科技有限公司

MODULE

MICROCHIP/微芯

上传：深圳市恒佳微电子有限公司

DIP

Microsemi

美高森美

上传：浙江永芯科技有限公司