Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.. • Fas

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ADPOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 30A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

POWER MOS V 600V 30A 0.200 Ohm

APT

晶科电子

Advanced Dual PWM and Dual Linear Power Controllers

General Description The APW6020 provides the power control and protection for four output voltages in high-performance , graphics intensive microprocessor and computer applications. The IC integrates two voltage-mode PWM controllers and two linear controllers , as well as the monitoring and prote

文件：128.87 Kbytes 页数：13 Pages

ANPEC

茂达电子

Advanced Dual PWM and Dual Linear Power Controllers

General Description The APW6020 provides the power control and protection for four output voltages in high-performance , graphics intensive microprocessor and computer applications. The IC integrates two voltage-mode PWM controllers and two linear controllers , as well as the monitoring and prote

文件：128.87 Kbytes 页数：13 Pages

ANPEC

茂达电子

Advanced Dual PWM and Dual Linear Power Controllers

General Description The APW6020 provides the power control and protection for four output voltages in high-performance , graphics intensive microprocessor and computer applications. The IC integrates two voltage-mode PWM controllers and two linear controllers , as well as the monitoring and prote

文件：128.87 Kbytes 页数：13 Pages

ANPEC

茂达电子