Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS VI™ 500V 77A 0.050Ω Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VI optimized gate

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POWER MOS 7 MOSFET

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® 500V 77A 0.050Ω Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimiz

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isc N-Channel MOSFET Transistor

·DESCRIPTION ·Drain Current -ID= 77A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 50mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·DC-DC converter

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ISC

无锡固电