isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

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ISC

无锡固电

POWER MOS V FREDFET

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi

文件：74.27 Kbytes 页数：4 Pages

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isc N-Channel MOSFET Transistor

文件：419.37 Kbytes 页数：2 Pages

ISC

无锡固电

POWER MOS V FREDFET

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi

文件：74.27 Kbytes 页数：4 Pages

ADPOW