Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

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ADPOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 65A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 30Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

无锡固电

POWER MOS V 100V 65A 0.030 Ohm

APT

晶科电子

MONOLITHIC CRYSTAL FILTER

文件：209.33 Kbytes 页数：1 Pages

FRONTER

福浪电子

MONOLITHIC CRYSTAL FILTER

文件：209.33 Kbytes 页数：1 Pages

FRONTER

福浪电子

MONOLITHIC CRYSTAL FILTER

文件：227.27 Kbytes 页数：1 Pages

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