Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit

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POWER MOS 7 1000V 24A 0.400 Ohm

APT

晶科

POWER MOS V FREDFET

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

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Schottky PowerMod

Schottky PowerMod ● Schottky Barrier Rectifier ● Guard Ring Protection ● 120 Amperes/35 to 50 Volts ● 175°C Junction Temperature ● Reverse Energy Tested ● ROHS Compliant

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Microsemi

美高森美