Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

文件：209.56 Kbytes 页数：4 Pages

ADPOW

POWER MOS V 1200V 26A 0.400 Ohm

APT

晶科电子

Schottky PowerMod

Schottky PowerMod ● Schottky Barrier Rectifier ● Guard Ring Protection ● 120 Amperes/35 to 50 Volts ● 175°C Junction Temperature ● Reverse Energy Tested ● ROHS Compliant

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MICROSEMI

美高森美

120 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

文件：134.78 Kbytes 页数：3 Pages

MCC

120 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

文件：412.74 Kbytes 页数：3 Pages

MCC