APT1201R6BVR数据表ic资料供应代理晶科电子-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
APT1201R6BVR	文件：62.64 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast 文件：62.64 Kbytes 页数：4 Pages	ADPOW	ADPOW
APT1201R6BVR	文件：300 bytes Page：1 Pages	POWER MOS V 1200V 8A 1.600 Ohm	APT 晶科电子	APT
APT1201R6BVRG	文件：100 bytes Page：1 Pages	包装：管件类别：分立半导体产品晶体管 - FET，MOSFET - 单个描述：MOSFET N-CH 1200V 8A TO-247	MICROCHIP 微芯科技	MICROCHIP
APT1201R6SVFR	文件：118.34 Kbytes Page：4 Pages	POWER MOS V FREDFET POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate lay 文件：118.34 Kbytes 页数：4 Pages	ADPOW	ADPOW

型号：
APT1201R6BVR
制造商：
ADPOW
制造商全称：
Advanced Power Technology
功能描述：
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

更多APT1201R6BVR供应商更新时间2026-1-28 16:30:00