POWER MOS 7 R FREDFET

• Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package

文件：418.26 Kbytes 页数：5 Pages

MICROSEMI

美高森美

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：372.27 Kbytes 页数：2 Pages

ISC

无锡固电

POWER MOS 7 FREDFET

文件：124.23 Kbytes 页数：4 Pages

ADPOW

POWER MOS 7 R FREDFET

• Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package

文件：418.26 Kbytes 页数：5 Pages

MICROSEMI

美高森美

POWER MOS 7 FREDFET

文件：418.72 Kbytes 页数：5 Pages

MICROSEMI

美高森美

POWER MOS 7 FREDFET

APT

晶科电子

FREDFETs

ROHS

Microchip

微芯科技