APT10M11LVFR中文资料下载供应价格ADPOW-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
APT10M11LVFR	文件：66.25 Kbytes Page：4 Pages	High Voltage N-Channel enhancement mode power MOSFET 文件：66.25 Kbytes 页数：4 Pages	ADPOW	ADPOW
APT10M11LVR	文件：65.269 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.. • Faster Switch 文件：65.269 Kbytes 页数：4 Pages	ADPOW	ADPOW
APT10M11JVFR	文件：121.37 Kbytes Page：4 Pages	High Voltage N-Channel enhancement mode power MOSFET 文件：121.37 Kbytes 页数：4 Pages	ADPOW	ADPOW
APT10M11JVR	文件：70.8 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching 文件：70.8 Kbytes 页数：4 Pages	ADPOW	ADPOW

更多APT10M11LVFR供应商更新时间2026-2-3 14:02:00