Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

文件：70.8 Kbytes 页数：4 Pages

ADPOW

ISOTOP Boost chopper MOSFET Power Module

Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration Benefits • Outstand

文件：730.39 Kbytes 页数：7 Pages

ADPOW

ISOTOP Boost chopper MOSFET Power Module

Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration Benefits • Outstand

文件：705.75 Kbytes 页数：7 Pages

MICROSEMI

美高森美

ISOTOP Buck chopper MOSFET Power Module

Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration Benefits • Outstand

文件：706.1 Kbytes 页数：7 Pages

MICROSEMI

美高森美

ISOTOP Buck chopper MOSFET Power Module

Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integrati Benefits • Outstandin

文件：730.66 Kbytes 页数：7 Pages

ADPOW

POWER MOS V 100V 144A 0.011 Ohm

APT

晶科电子

100V/Boost chopper/Si Mosfet modules

MOSFETsLow RDSonLow input and Miller capacitanceLow gate chargeAvalanche energy ratedVery ruggedKelvin source for easy driveLow stray inductanceOutstanding performance at high frequency operationDirect mounting to heatsink (isolated package)Internal thermistor for temperature monitoring (optional)Lo • Configuration: Boost chopper\n• VDSS (V): 100\n• RDSon (mR) typ: 11\n• Current (A) Tc=80C: 100\n• Silicon type: MOSFET \n• Package: SOT227;

Microchip

微芯科技

100V/Buck chopper/Si Mosfet modules

MOSFETsLow RDSonLow input and Miller capacitanceLow gate chargeAvalanche energy ratedVery ruggedKelvin source for easy driveLow stray inductanceOutstanding performance at high frequency operationDirect mounting to heatsink (isolated package)Internal thermistor for temperature monitoring (optional)Lo • Configuration: Buck chopper\n• VDSS (V): 100\n• RDSon (mR) typ: 11\n• Current (A) Tc=80C: 100\n• Silicon type: MOSFET \n• Package: SOT227;

Microchip

微芯科技