CY2305C

3.3VZeroDelayClockBuffer

DMG2305UX

LowOn-Resistance

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ●LowOn-Resistance ●LowInputCapacitance ●FastSwitchingSpeed Applications ●Backl

DMG2305UXQ

P-CHANNELENHANCEMENTMODEMOSFET

DMG2305UXQ

P-CHANNELENHANCEMENTMODEMOSFET

DMG2305UXQ

-20VP-ChannelEnhancementModeMOSFET

Description toprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. TheusesadvancedtrenchtechnologyDMG2305UXQ GeneralFeatures VDS=-20VID=-4.9A RDS(ON)

DMP2305U

P-CHANNELENHANCEMENTMODEMOSFET

Features •LowOn-Resistance ◾60mΩ@VGS=-4.5V ◾90mΩ@VGS=-2.5V ◾113mΩ@VGS=-1.8V •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Not

DMP2305U

P-CHANNELENHANCEMENTMODEMOSFET

Features •LowOn-Resistance •60mΩ@VGS=-4.5V •90mΩ@VGS=-2.5V •113mΩ@VGS=-1.8V •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Not

DMP2305UVT

20VP-CHANNELENHANCEMENTMODEMOSFET

Description ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowInputCapacitance •LowOn-Resistance •FastSwitchingSpee

DMS2305(SI2305DS)(1)

DO2305

P-ChannelMOSFETusesadvancedtrenchtechnology