APM9435KC-TR

P-ChannelEnhancementModeMOSFET

N-ChannelEnhancementModeMOSFET Features •-30V/-4.6A, RDS(ON)=52mΩ(typ.)@VGS=-10V RDS(ON)=80mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookCompute

APM9435KC-TRL

P-ChannelEnhancementModeMOSFET

N-ChannelEnhancementModeMOSFET Features •-30V/-4.6A, RDS(ON)=52mΩ(typ.)@VGS=-10V RDS(ON)=80mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookCompute

APM9435KC-TRL

P-Channel30-V(D-S)MOSFET

APM9435KC-TU

P-ChannelEnhancementModeMOSFET

P-ChannelEnhancementModeMOSFET Features •-30V/-4.6A,RDS(ON)=52mΩ(typ.)@VGS=-10V RDS(ON)=80mΩ(typ.)@VGS=-4.5V •SuperHighDensityCellDesign •ReliableandRugged •SO-8Package Applications •PowerManagementinNotebookComputer,Port

ASM9435

N-ChannelMOSFETusesadvancedtrenchtechnology

B9435

P-ChannelMOSFETusesadvancedtrenchtechnology

BLM9435

P-ChannelEnhancementModePowerMOSFET

BM9435A

P-ChannelEnhancementModeMOSFET

BU9435KV

SiliconMonolithicintregratedcircuit

CEM9435

P-ChannelEnhancementModeMOSFET

FEATURES ■-30V,-5.3A,RDS(ON)=50mΩ@VGS=-10V. ​​​​​​​RDS(ON)=90mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.