MOSFET

AP7N60D采用先进的沟道技术，提供出色的RDS（ON），低栅极电荷和栅极电压低至3.5V的操作。该器件适用于负载开关或PWM应用。 VDS = 600V，ID =7A \nRDS（ON）<1.05mΩ\n@ V GS =10V RDS（ON）<1.25mΩ\n@ V GS = 4.5V 高功率和电流处理能力\n无铅产品\nTO-251插件封装\n;

APM

永源微

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

文件：122.09 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

文件：118.14 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor withr Anti-Parallel Diode

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both

文件：144.18 Kbytes 页数：6 Pages

ONSEMI

安森美半导体