丝印：AP7N80T；Package：TO-263-3L；800V N-Channel Enhancement Mode MOSFET

Features - VDS = 800V ID =7A - RDS(ON)

文件：1.28607 Mbytes 页数：9 Pages

APME

永源微电子

800V N-Channel MOSFET

Features • 6.6A, 800V, RDS(on) = 1.5Ω @VGS = 10 V • Low gate charge ( typical 40 nC) • Low Crss ( typical 19 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：802.07 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：785.26 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS(on) = 1.0 OHM

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMO

文件：220.96 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉