800V N-Channel MOSFET

Features • 6.6A, 800V, RDS(on) = 1.5Ω @VGS = 10 V • Low gate charge ( typical 40 nC) • Low Crss ( typical 19 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：802.07 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

800V N-Channel MOSFET

ONSEMI

安森美半导体

800V N-Channel MOSFET

Features • 6.6A, 800V, RDS(on) = 1.5Ω @VGS = 10 V • Low gate charge ( typical 40 nC) • Low Crss ( typical 19 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：802.07 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

800V N-Channel MOSFET

Features • 6.6A, 800V, RDS(on) = 1.5Ω @VGS = 10 V • Low gate charge ( typical 40 nC) • Low Crss ( typical 19 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：842.57 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：785.26 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司