AP7N65D-B中文资料下载批发供应永源微电子-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
AP7N65D-B	文件：1.07085 Mbytes Page：8 Pages	丝印：AP7N65D-B；Package：TO-252-3L；650V N-Channel Enhancement Mode MOSFET Features - VDS = 650V ID =7A - RDS(ON) 文件：1.07085 Mbytes 页数：8 Pages	APME 永源微电子	APME
FQA7N65C	文件：722.05 Kbytes Page：8 Pages	650V N-Channel MOSFET These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. 文件：722.05 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FQP7N65C	文件：886.6 Kbytes Page：10 Pages	650V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件：886.6 Kbytes 页数：10 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FQPF7N65C	文件：886.6 Kbytes Page：10 Pages	650V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件：886.6 Kbytes 页数：10 Pages	FAIRCHILD 仙童半导体	FAIRCHILD

更多AP7N65D-B供应商更新时间2026-4-20 9:07:00