30V N-Channel Enhancement Mode MOSFET

Features - VDS = 30V ID =60A - RDS(ON)

文件：1.46397 Mbytes 页数：7 Pages

APME

永源微电子

30V N-Channel Enhancement Mode MOSFET

Features - VDS = 30V ID =60A - RDS(ON)

文件：1.46397 Mbytes 页数：7 Pages

APME

永源微电子

30V N-Channel Enhancement Mode MOSFET

APM

永源微

N-Channel Logic Level PWM Optimized Power MOSFET

文件：238.51 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

N-Channel Logic Level MOSFETs 30V, 30A, 0.023ohm

General Description This device employs advanced MOSFET technology and features low gate charge while maintaining low on resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. F

文件：124.13 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

30V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 60A, 30V. RDS(on)= 0.0135Ω@VGS= 10 V • Low gate charge ( typical 18.5 nC) • Low Crss ( typical 155 pF) • Fa

文件：651.43 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体