丝印：5000；Package：AP60N04DFXXXYYYY；40V N-Channel Enhancement Mode MOSFET

Features - VDS = 40V ID =60 A - RDS(ON)

文件：1.59813 Mbytes 页数：7 Pages

APME

永源微电子

丝印：AP60N04DF；Package：DFN3.3X3.3；40V N-Channel Enhancement Mode MOSFET

文件：4.26064 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

40V N-Channel Enhancement Mode MOSFET

APM

永源微

40 V – 60 A – N-channel Power MOS FET Application: Automotive

Description The NP60N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 3.95 m MAX. (VGS = 10 V, ID = 30 A) • Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) • Logic level drive type • Designed for

文件：278.91 Kbytes 页数：8 Pages

RENESAS

瑞萨

40 V – 60 A – N-channel Power MOS FET Application: Automotive

Description The NP60N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A) • Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) • Logic level drive type • Designed f

文件：271.36 Kbytes 页数：8 Pages

RENESAS

瑞萨

40 V – 60 A – N-channel Power MOS FET Application: Automotive

Description The NP60N04VLK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 3.9 m MAX. (VGS = 10 V, ID = 30 A) • Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) • Logic level drive type • Designed for

文件：577.74 Kbytes 页数：8 Pages

RENESAS

瑞萨