AP60N03S

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

CMT60N03

NCHANNELLOGICLEVELPOWERMOSFET

CMT60N03G

N-CHANNELLogicLevelPowerMOSFET

EMZF60N03Z

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS30V RDSON(MAX.)60mΩ ID3.2A Pb‐FreeLeadPlating&HalogenFree ESDProtection

FIR60N03PG

30V-ChannelMosfet

FQB60N03L

N-ChannelLogicLevelPWMOptimizedPowerMOSFET

FQB60N03L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.0135Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQD60N03L

N-ChannelLogicLevelMOSFETs30V,30A,0.023ohm

GeneralDescription ThisdeviceemploysadvancedMOSFETtechnologyandfeatureslowgatechargewhilemaintaininglowonresistance.Optimizedforswitchingapplications,thisdeviceimprovestheoverallefficiencyofDC/DCconvertersandallowsoperationtohigherswitchingfrequencies. F

FQD60N03L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40.3A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.019Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQP60N03L

30VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •60A,30V.RDS(on)=0.0135Ω@VGS=10V •Lowgatecharge(typical18.5nC) •LowCrss(typical155pF) •Fa