AP2303N

P-CHANNEL ENHANCEMENT MODE

Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,lowon-resistanceandcost-effectiveness. ▼SimpleDriveRequirement ▼SmallPackageOutline ▼SurfaceMountDevice

APM2303AC-TRL

P-Channel30V(D-S)MOSFET

AT-2303

StriplineMountingFixedAttenuators

BC2303

Plastic-EncapsulateMOSFETS

FEATURE TrenchFETPowerMOSFET APPLICATIONS LoadSwitchforPortableDevices DC/DCConverter

C-2303

InsulKrimp??PiggybackQuickDisconnect,Tab6.35mm(.250)by0.81mm(.032),10-12AWG,YellowInsulator,Tape

C-2303T

InsulKrimp??PiggybackQuickDisconnect,Tab6.35mm(.250)by0.81mm(.032),10-12AWG,YellowInsulator,Tape

CED2303

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-9A,RDS(ON)=200mΩ@VGS=-10V. RDS(ON)=320mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CES2303

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-1.9A,RDS(ON)=150mΩ(typ)@VGS=-10V. RDS(ON)=230mΩ(typ)@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CEU2303

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-9A,RDS(ON)=200mΩ@VGS=-10V. RDS(ON)=320mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CHT2303PT

P-ChannelEnhancementModeFieldEffectTransistor