P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage appli

文件：71 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description\nThe Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness.\nThe SOT-23 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage application

APEC

富鼎先进

PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications

文件：228.09 Kbytes 页数：14 Pages

NSC

国半

PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications

文件：228.09 Kbytes 页数：14 Pages

NSC

国半

Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

文件：23.7 Kbytes 页数：2 Pages

NTE