Capable of 2.5V gate drive, Lower on-resistance

Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is widely used for all commercial-industrial applications. ▼ Capable of 2.5V gate drive ▼ Lower on

文件：105.88 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Surface mount package

文件：105.88 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Surface Mount Package

文件：106.93 Kbytes 页数：5 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：72.51 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel 20 V (D-S) MOSFET

文件：1.03553 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode MOSFET

Features • 30V/3.5A, RDS(ON)=70mΩ(typ.) @ VGS=5V RDS(ON)=42mΩ(typ.) @ VGS=10V • Super High Dense Cell Design • High Power and Current Handling Capability • SOT-23 Package Applications • Switching Regulators • Switching Converters

文件：172.35 Kbytes 页数：9 Pages

ANPEC

茂达电子