P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage appli

文件：67.81 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Silicon NPN Transistor High Gain Power Amp

Features: • High Voltage • High DC Current Gain • High Collector Power Dissipation Capability

文件：20.03 Kbytes 页数：2 Pages

NTE

GENERAL PURPOSE AMPLIFIER

Product Description The RF2307 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：59.54 Kbytes 页数：4 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2307 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：59.54 Kbytes 页数：4 Pages

RFMD

威讯联合