20V N-Channel Enhancement Mode MOSFET

Features - VDS = 20V ID =3.2A - RDS(ON)

文件：478.22 Kbytes 页数：7 Pages

APME

永源微电子

20V N-Channel Enhancement Mode MOSFET

AP2302BI采用先进的沟道技术，提供出色的RDS（ON），低栅极电荷和栅极电压低至1.8V的操作。该器件适用于负载开关或PWM应用。一般特性高功率，和电流处理能力，无铅产品SOT23小体积封装 VDS = 20V，ID = 2.3A \nRDS（ON）<65m\nΩ@ V GS = -2.5V RDS（ON）<85m\nΩ@ V GS = -4.5V 高功率和电流处理能力\n无铅产品\nSOT23小体积封装;

APM

永源微

Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode

Features: • High Breakdown Voltage and High Reliability • High Switching Speed • Capable of Being Mounted in a Variety of Methods

文件：21.35 Kbytes 页数：2 Pages

NTE

BROADBAND LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. It is suitable for use in CDMA or TDMA systems in the cellular or PCS band, in DAMPS sys

文件：164.21 Kbytes 页数：8 Pages

RFMD

威讯联合

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI2302DS in SOT23. Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package.

文件：257.32 Kbytes 页数：12 Pages

PHI

PHI