P-CHANNEL ENHANCEMENT MODE

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applicati

文件：77.05 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

丝印：N2**；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. ▼ Capable of 2.5V gate drive ▼ Small package outline ▼ Surface mount package

文件：70.01 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Capable of 2.5V gate drive, Small package outline

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. ▼ Capable of 2.5V gate drive ▼ Small package outline ▼ Surface mount package ▼RoHS Compliant

文件：102.12 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. ▼ Capable of 2.5V gate drive ▼ Small package outline ▼ Surface mount package

文件：77.1 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage appl

文件：92.21 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

DDR BUS TERMINATION REGULATOR

Description The AP2303 is a low dropout linear regulator to generate termination voltage of DDR-SDRAM system. The regulator can source or sink up to 1.75A current continuously. The output voltage is regulated to track tightly with the reference voltage (1/2VDDQ) within ±10mV. Features • Support

文件：947.13 Kbytes 页数：15 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device

文件：70.17 Kbytes 页数：4 Pages

A-POWER

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P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：1.047349 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Simple Drive Requirement, Small Package Outline

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device ▼ RoHS Compliant & Halogen-Free

文件：100.27 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

DDR BUS TERMINATION REGULATOR

Description The AP2303 is a low dropout linear regulator to generate termination voltage of DDR-SDRAM system. The regulator can source or sink up to 1.75A current continuously. The output voltage is regulated to track tightly with the reference voltage (1/2VDDQ) within ±10mV. Features • Support

文件：947.13 Kbytes 页数：15 Pages

DIODES

美台半导体