丝印：AP20P03S；Package：SOP-8L；-30V P-Channel Enhancement Mode MOSFET

Features - VDS = -30V ID =-20A - RDS(ON)

文件：1.65212 Mbytes 页数：7 Pages

APME

永源微电子

TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM

HDTMOS E-FET High Density Power FET DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery

文件：244.94 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM

HDTMOS E-FET High Density Power FET DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery

文件：244.94 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

Single Phase 20.0 AMPS. Glass Passivated Bridge Rectifiers

FEATURES - Glass passivated junction - Ideal for printed circuit board - Typical IR less than 0.1μA - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 defini

文件：50.27 Kbytes 页数：2 Pages

TSC

台湾半导体