丝印：AP20P06NF；Package：PDFN5X6-8L；-60V P-Channel Enhancement Mode MOSFET

Features - VDS = -60V ID =-20A - RDS(ON)

文件：890.12 Kbytes 页数：7 Pages

APME

永源微电子

TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

文件：308.53 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

文件：308.53 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

Power MOSFET ??0 V, ??5.5 A, Single P?묬hannel, DPAK

文件：119.94 Kbytes 页数：7 Pages

ONSEMI

安森美半导体