2.0x1.25mm SMD CHIP LED LAMP

Description The Super Bright Yellow source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. Features ● 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. ● LOW POWER CONSUMPTION. ● WIDE VIEWING ANGLE. ● IDEAL FOR BACKLIGHT AND INDICATOR. ● VARIOUS COLORS AND LENS TYPES AVAI

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KINGBRIGHT

今台电子

2.0x1.25mm SMD CHIP LED LAMP

文件：1.394 Mbytes 页数：5 Pages

TO-GRACE

至恩科技

NPN DARLINGTON POWER MODULE

■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW RthJUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE ■ FULLY INSULATED PACKAGE (UL COMPLIANT) ■ EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: ■ MOTOR CONTROL

文件：117.92 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PolyfetTMrocess features gold metal for greatly extended lifetim

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POLYFET

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

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NTE