AP1002B技术资料参数批发采购世微半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
AP1002B	文件：300 bytes Page：1 Pages	MOSFET场效应管	Shiwei 世微半导体	Shiwei
MRF1002	文件：109.38 Kbytes Page：6 Pages	MICROWAVE POWER TRANSISTORS The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested 文件：109.38 Kbytes 页数：6 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MRF1002MA	文件：109.38 Kbytes Page：6 Pages	MICROWAVE POWER TRANSISTORS The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested 文件：109.38 Kbytes 页数：6 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MRF1002MB	文件：109.38 Kbytes Page：6 Pages	MICROWAVE POWER TRANSISTORS The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested 文件：109.38 Kbytes 页数：6 Pages	MOTOROLA 摩托罗拉	MOTOROLA

更多AP1002供应商更新时间2026-10-21 15:44:00