-60V P-Channel Enhancement Mode MOSFET

Features - VDS = -60V ID =-100A - RDS(ON)

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APME

永源微电子

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID(

文件：191.09 Kbytes 页数：7 Pages

NEC

瑞萨

-60V – -100A – P-channel Power MOS FET Application : Automotive

Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A ) • Low input capacitance : Ciss =

文件：1.35852 Mbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID

文件：189.76 Kbytes 页数：7 Pages

NEC

瑞萨